| 摘要 |
PURPOSE:To produce a thick metallic oxide film when a raw liq. is vaporized by the ultrasonic wave and the vapor is brought into contact with a heated substrate to form a metallic oxide film by incorporating a soln. of the metal seeds constituting the metallic oxide into the raw liq. CONSTITUTION:A metallic alkoxide soln. 2 consisting of metals (Pb, Ti, Zr, etc.) and alcohols, for example, is vaporized by an ultrasonic vibrator 1. A carrier gas (N2, Ar, etc.) is introduced from an inlet 3 and a gaseous reactant (O2, NO2, etc.) from an inlet 4, as required, the vaporized material is sent to a substrate 9 (glass, ceramic, etc.) heated by a heater 5 to form the metallic oxide film on the substrate 9. At this time, 1 layers of the metal oxide film can be previously formed on the substrate 9 or an intermediate layer (Pt/Cu/Cr, etc.) for accelerating the crystallization and orientation of the metallic oxide film is prefereably formed between the substrate 9 and the metallic oxide film, and a bias voltage is impressed on the substrate 9. A thick metallic oxide film having about 1-500mu thickness is formed on the substrate 9 is this way. |
