发明名称 SEMICONDUCTOR DEVICE AND BRAZING METHOD THEREOF
摘要 PURPOSE:To reduce a void generation, improve heat dissipation, and not to cause pellet cracks generation by a method wherein wettability of a brazing material on a brazing surface of a semiconductor device is made excellent. CONSTITUTION:On at least one brazing surface of a semiconductor substrate 1 making a part of a semiconductor pellet and a heat conduction material 2 making a package, grooved parts 3 comprising V-shaped or U-shaped grooves are formed in parallel or radially. If a preform brazing material is set in a central part on the brazing surface to perform a reflow, a melted brazing material 4 can expand along the grooves all over the grooved parts 3.
申请公布号 JPH04312932(A) 申请公布日期 1992.11.04
申请号 JP19910009901 申请日期 1991.01.30
申请人 HITACHI LTD;HITACHI VLSI ENG CORP 发明人 AKASAKI HIROSHI
分类号 H01L21/52;H01L23/14 主分类号 H01L21/52
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