| 摘要 |
PURPOSE:To provide a high breakdown voltage semiconductor device in which power consumption is reduced and an operation is accelerated by improving reverse recovery characteristics. CONSTITUTION:A p-type emitter layer 2 is formed on one surface of a high resistance n<-> type base layer 1. A p<+> type contact layer 22 and an n<+> type current blocking layer 6 are dispersively disposed at a predetermined area ratio on the surface of the layer 2, simultaneously brought into contact with the layers 22 and 6 of this p-n junction diode to form a cathode electrode 4. As such a cathode structure, an injection of electrons in an ON state is suppressed to reduce a carrier concentration at the cathode side in the layer 1, and further a parasitic transistor effect at the time of reverse recovery is suppressed by the provision of the layer 6 thereby to improve reverse recovery characteristics.
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