| 摘要 |
<p>PURPOSE:To suppress a growth of an alloy layer accompanied by a plating process of an external lead in a semiconductor device having the external lead and to prevent it from generating inconveniences such as breaking of the external lead, an increase in an electric resistance, or the like. CONSTITUTION:A nickel plating layer 16 is solely formed on a copper foil 10, or the nickel plating layer 16 and a copper plating layer 18 are doubly formed and then a solder plating layer 12 is formed thereon. Further, a palladium plating layer is formed instead of the nickel plating layer 16.</p> |
