| 摘要 |
<p>2086409 9220104 PCTABS00017 An advanced solar cell (10; 10'; 10'') having an improved efficiency over known conventional solar cells uses an external electric field to enhance the conversion of solar energy (P) into electrical energy (I). The cell has a layered extrinsic semiconductor with a lightly doped base layer (12; 50; 90) having opposing incident and collection surfaces (14-16; 52-54; 92, 98), at least one of which has recessed contact regions (18; 56; 94, 100) interspersed between biasing regions (20; 58; 96, 102). The base layer is sandwiched between two oppositely and heavily doped layers (22, 26; 60, 70; 104, 120), at least one of which is substantially confined within the recessed contact regions. Overlaying the biasing region is an enhancement layer (32; 76; 110, 124), such as a layered MOS structure, which is biased. A transparent layer (36; 62; 114) of a conductive material may overlay one of the heavily doped layers or comprise a portion of the MOS structure. A method is provided of converting solar energy (P) into electrical energy (I).</p> |
