发明名称 SHUSEKIKAIROSOCHI
摘要 PURPOSE:To curtail the amount of a high-priced molybdenum in order to obtain a small-sized and low-priced integrated circuit device by a method wherein an auxiliary plate is inserted between a die frame and a wafer chip and formed of a disk having a smaller area than the area of the wafer chip. CONSTITUTION:An auxiliary disc 7 is adhered onto a die frame 6 by, for instance, solder or the like and a wafer chip is adhered onto an upper surface thereof by solder. The area of a part coming into contact with a wafer chip 3 is made smaller than that of the wafer chip 3. Therefore, when thermal expansion is generated due to heat generation of the wafer chip 3 itself or heat from outside, its stress is dispersedly produced along surroundings of the auxiliary disc 7 and the distortion due to the heat expansion is suppressed to a value corresponding not to the entire surface of the wafer chip 3 but to the area of the auxiliary disc 7, whereby cracks in the wafer chip 3 are not produced.
申请公布号 JPH04312934(A) 申请公布日期 1992.11.04
申请号 JP19910065776 申请日期 1991.03.29
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIKUYAMA SEIICHIRO;YAMAUCHI NAOKI
分类号 H01L21/52;(IPC1-7):H01L21/52 主分类号 H01L21/52
代理机构 代理人
主权项
地址