发明名称 Hot filament chemical vapor deposition reactor
摘要 An improved hot filament chemical vapor deposition (HFCVD) reactor is disclosed comprising a gas dispersion system, a filament network and an apertured support plate for the substrate. The apertures in the support plate provide for counteracting the natural pressure and temperature gradients which arise within the reactor so that a uniform deposit or material can be coated over the entire surface of multiple small pieces simultaneously. Specifically, the apertured support plate substantially reduces the extent of radial (stagnation point) gas flow adjacent to the substrate which significantly improves coating uniformity.
申请公布号 US5160544(A) 申请公布日期 1992.11.03
申请号 US19900578734 申请日期 1990.09.06
申请人 DIAMONEX INCORPORATED 发明人 GARG, DIWAKAR;TSAI, WILMAN;IAMPIETRO, ROBERT L.;KIMOCK, FRED M.;KELLY, C. MICHAEL
分类号 C23C16/27;C23C16/44;C23C16/455;C23C16/458 主分类号 C23C16/27
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