发明名称 Process for nitriding silicon containing materials
摘要 A process for nitriding materials containing silicon to form a silicon nitride material predominantly in the alpha phase is disclosed which includes nitriding the silicon-containing material by subjecting it to a nitriding atmosphere containing at least nitrogen gas in combination with at least one other nitriding gas while keeping the composition of the nitriding atmosphere substantially constant by maintaining a substantially constant partial pressure of nitrogen gas during the nitriding, even though nitrogen is being consumed during the nitriding step to form the silicon nitride.
申请公布号 US5160719(A) 申请公布日期 1992.11.03
申请号 US19910785909 申请日期 1991.11.04
申请人 EATON CORPORATION 发明人 EDLER, JAMES P.
分类号 C04B35/591 主分类号 C04B35/591
代理机构 代理人
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