发明名称 |
Three-dimensional semiconductor structures formed from planar layers |
摘要 |
Three-dimensional semiconductor structures are taught in which various device types are formed from a plurality of planar layers on a substrate. The major process steps include the formation of a plurality of alternating layers of material, including semiconductor and dielectric materials, forming a vertical access hole in the layers, processing the layers selectively to form active or passive semiconductor devices, and filling the access hole with a conductor. The ultimate structure includes a three-dimensional memory array in which entire dynamic memory cells are fabricated in a stacked vertical orientation above support circuitry formed on a planar surface. |
申请公布号 |
US5160987(A) |
申请公布日期 |
1992.11.03 |
申请号 |
US19910656902 |
申请日期 |
1991.02.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PRICER, WILBER D.;FAURE, THOMAS B.;MEYERSON, BERNARD S.;NESTORK, WILLIAM J.;TURNBULL, JR., JOHN R. |
分类号 |
H01L21/02;H01L21/306;H01L21/3213;H01L21/334;H01L21/8242;H01L25/065;H01L27/06;H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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