| 发明名称 |
Semiconductor device with composite surface insulator |
| 摘要 |
A semiconductor device comprises a substrate, first insulation layers formed on the substrate, and a second insulation layer formed on the substrate. The second insulation layer, which acts as a dielectric material of a capacitor component of the semiconductor device, is thinner than each of the first insulation layers.
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| 申请公布号 |
US5160988(A) |
申请公布日期 |
1992.11.03 |
| 申请号 |
US19910657934 |
申请日期 |
1991.02.25 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIGUCHI, TAKAYOSHI;SUGIURA, SOUICHI |
| 分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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