| 摘要 |
An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel that are biased by a control circuit. Once deflected, the ion beam enters an electrostatic lens that redeflects the once deflected ion beam. When the beam exits the lens it moves along a trajectory that impacts a workpiece. By controlled deflection of the beam multiple parallel beam paths result, all of which input the workpiece at a uniform impact angle.
|
