| 摘要 |
PURPOSE:To prevent the read-out malfunction by recovering greatly a potential difference of a first and a second nodes for data storage, which become small by being influenced by a software error factor, and thereafter, executing read- out of data, at the time of reading out a memory cell of a static RAM. CONSTITUTION:At the time of reading out data of a memory cell, a charge pulse So having prescribed pulse width, and also, having amplitude corresponding to a threshold of NMOSs 21, 22 is passed, through a leader line 27 of a selected memory cell at the timing corresponding to a selecting signal Sw and is applied to storage nodes N11, N12 through a specific capacitor. As a result, by applying the charge pulse Sc, a potential difference of the storage nodes N11, N12 is recovered greatly. Accordingly, when read-out of storage data of the storage nodes N11, N12 is executed, a read-out malfunction caused by a software error factor can be prevented. |
