| 摘要 |
PURPOSE: To make a reactive compound generated in an etching process into a non-reactive compound by passivating a semiconductor device by introducing a passivation agent composed of SiF4 after etching the semiconductor device. CONSTITUTION: Plasma state passivation gas is formed between upper and lower etching electrodes 22 and 24. The upper etching electrode 22 is grounded by a grounding means 26. The lower etching electrode 24 is connected to a high-frequency power supply 28, which generates SiF6 plasma state passivation material in vacuum. The plasma state SiF4 shifts downward through an opening part 30 of the electrode 22, and the electrode 24, reacts with a reactive compound in an etched semiconductor device 14 and controls so as to make the reactive compound a non-reactive compound.
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