| 摘要 |
PURPOSE:To obtain semiconductor porcelain having a positive resistance temperature coefficient of resistance and a low specific resistance at room temperautre by bringing total content of fluorine, chlorine and bromine of a barium titanate semiconductor porcelain having a positive resistance coefficient, to 0.01 atomic % or lower. CONSTITUTION:Powder is formed by compounding BaCO2, BaCl3, TiO2, SrCO3, CaCO3, LaP3, MnO2 and SiO2. After the compounded powder and zirconia balls have been pulverized and mixed, they are dried up by evaporation and baked. After 5wt.% of binder have been added and mixed, they are dried up and a disc plate-shaped molded body is formed by a press-molding machine. The molded body is baked in the atmospheric air, and a baked body is formed. Both main surfaces of the baked body are coated with an In-Ga alloy, and an electrode is formed. As a result, the specific resistance at room temperature can be sharply decreased without deterioration of the temperature coefficient of resistance of the semiconductor porcelain having a positive temperature coefficient of resistance, and the adaptability for a large current and the miniaturization of an element can be accomplished. |
