| 摘要 |
PURPOSE:To provide a stacked type DRAM having a large capacity value by preventing a decline in the insulation between a capacity and gate electrodes at the time of forming a capacity contact. CONSTITUTION:A spacer silicon oxide film 108 is formed on the side wall of a gate electrode 104b so that the film 108 can protrude from the side wall. An accumulation electrode 113 is constituted of a two-layer film of a dummy electrode 106b and polycrystalline silicon film 112 on the gate electrode 104b with a silicon oxide film 105 in between and the electrode 113 is constituted only of the film 112 in the other area. |
