| 摘要 |
<p>PURPOSE:To allow the removal of resist residues and to obtain good thin-film transistors(TFTs) by sealing gaseous CIF3 in a resist peeling stage after patterning the protective film on the TFT array. CONSTITUTION:The TFT 12 is constituted of a gate electrode 3, a gate insulating film 4, an active layer 5, an etching stopper layer 6, an ohmic contact layer 7, a drain electrode 10, and a source electrode 11. The surface is coated with the protective film 13 consisting of, for example, silicon nitride in order to suppress the change of the TFT 12 with lapse of time. In succession, a prescribed resist 14 is applied over the entire surface and thereafter, a part of the protective film 13, i.e., the electrical junctures on picture element electrodes 8 and the peripheral parts are removed by using a lithography technique. The resist peeling by a peeling liquid and the resist peeling by the gaseous CIF3 are employed in combination at the time of peeling the applied resist 14.</p> |
