| 摘要 |
PURPOSE:To hold down the acceleration of ionization of Ag contained in a solder alloy and to prevent migration from being caused and thereby to provide connection material having a high electric reliability by allowing the solder alloy, mainly composed of Pb, Sn or In, to contain Ag and Pd and by making the ratio of Pd to Ag the specified value or above. CONSTITUTION:A solder alloy, mainly composed of Pb, Sn or In, is allowed to contain Ag and Pb. The ratio of Pd to Ag [Pd wt% (Ag wt%+Pd wt%)] is 0.1 or above. Such solder alloy is used as connection material. It is preferable that 1-5wt% of Ag should be contained in the solder alloy. A semiconductor element 2 and a substrate 1 are connected with the said connection material 3 to fabricate a semiconductor device. For example, a metallized layer 4 which is constituted of Ti layer, Ni layer and Au layer is formed on the ceramic substrate 1 and the same metallized layer 5 is formed on the semiconductor chip 2 and the connection material 3 is bonded between the two metallized layers 4 and 5. |
