SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To prevent degradation of the electric characteristics of transistors arranged on the periphery of a memory array (or a memory mat) formed on a semiconductor chip. CONSTITUTION:The inner configuration of a guard ring G arranged on the periphery of a memory mat MM is made substantially equal to the configuration of a diffusion layer 4a on the periphery of the memory mat MM. Also, on this guard ring G, a dummy pattern 8 is provided. The inner configuration of this dummy 8 is made substantially equal to the configuration of a gate electrode 7 arranged on the diffusion layer 4a on the periphery of the memory mat MM.