Field effect-controllable semiconductor device - has insulation layer to prevent switch-on of bipolar structure

摘要

A field effect-controllable semiconductor device has a semiconductor body with two main faces (5,6), the first (5) of which adjoins a first conductivity type source region (4) adjacent a second conductivity type gate region (3), the novelty being that an insulation layer (7) is adjacent the source region (4) at a location between the source region (4) and the second main face (6). The insulation layer (7) may be a silicon oxide or a silicon nitride layer having at least the same lateral dimensions as the source region (4) and pref. being less than 1 micron thick. The source region (4) is pref. electrically connected to the gate region (3). USE/ADVANTAGE - The device may be a MOS transistor, a field effect-controlled thyristor or an IGBT, esp. a vertical MOSFET, a lateral MOSFET or a lateral MOSFET and a CMOSFET. The insulation layer prevents or at least hinders switch-on of the bipolar structure, thus preventing latch-up or sec. breakdown.