| 摘要 |
PURPOSE:To simplify the structure and to prevent blooming by providing a transfer gate and an impurity-doped layer for charge transfer colsely to picture-element electrodes and by coupling a CCD shift register and the impurity-doped layer for excessive charge discharging with each impurity-doped layer via the gate. CONSTITUTION:On insulating film 12 of semiconductor substrate 8, picture-element electrodes 1a are provided. Impurity-doped layer D is provided adjoining to each line of picture-element electrodes 1a through transfer gate GT. One end of each impurity-doped layer D is coupled with each stage of CCD shift register B via read gate GR. Further, the other end of doped layer D is coupled with impurity-doped layer DOF for excessive charge discharging via gate GOF for excessive charge discharging. |
