| 摘要 |
<p>PURPOSE:To form a uniform crystal silicon layer on the whole of a substrate by devising a method in which a silicon layer is irradiated with a laser beam. CONSTITUTION:An amorphous silicon layer whose hydrogen content is at 1% or lower is formed on a silicon substrate or an insulating substrate, irradiated with an excimer laser whose energy intensity distribution has been improved to be rectangular. A laser beam which radiated from a laser source 201 and whose energy intensity is set to a pseudo-Gaussian distribution is improved to a laser beam whose energy intensity distribution is trapezoidal by using a special optical system such as a fly-eye lens 204 or the like. Then, the laser beam is improved to a laser beam 208 whose energy intensity distribution is rectangular through a convex lens 205 and a concave lens 206 and through a mask 207 composed of a high-melting-point metal. The silicon layer is irradiated with the laser beam. Even when an annealing operation is performed by overlapping the improved beam, the edge part of the beam does not become uneven. As a result, it is possible to form the uniform and high-quality silicon layer on the whole of the substrate.</p> |
