| 摘要 |
A charge-coupled device (CCD) image sensor, which can be operated either in the interlace mode or in the non-interlace mode, includes in a substrate of a semiconductor material a plurality of photodetectors, such as photodiodes, arranged in an array of rows and columns. A separate CCD shift register in the substrate extends along each column of the photodectectors. First and second sets of conductive gates extend transversely across the CCD shift registers with each first gate extending across a portion of the photodetectors in each row and each of the second gates extending across the remaining portion of the photodetectors in each row. A transfer region extends across the substrate from a portion of each of the photodetectors to an adjacent CCD shift register. The transfer regions of alternate photodetectors in each column extends under the first gates of the photodetectors and the transfer regions of the other photodetectors in each column extends under the second gates of the respective photodetectors. |
