| 摘要 |
<p>A method including covering the area to be laser trimmed with a first insulative layer (22) having a thickness sufficiently thin that a layer can trim the area through the first insulative layer. An etch stop (26) is formed on the first insulative layer over the aera to be trimmed and covered with a second insulative layer (28). A portion of the second insulative layer is etched to expose the etch stop and a portion of the etch stop is then removed to expose a portion of the first insulative layer and laser trimming is conducted through the exposed first insulative layer. The etch stop is part of a first level of interconnects (24) made of the same material and simultaneously with the etch stop. The area to be trimmed is part of a second level of contacts that interconnect another second material.</p> |
