| 摘要 |
<p>PCT No. PCT/DE88/00487 Sec. 371 Date Apr. 5, 1989 Sec. 102(e) Date Apr. 5, 1989 PCT Filed Aug. 6, 1988 PCT Pub. No. WO89/02162 PCT Pub. Date Mar. 9, 1989.A schottky diode consists of a substrate from gallium/arsenide (5) on which epitaxially a monocrystalline gallium/arsenide layer (6) doped with silicium is applied. For creating the Schottky contact, a monocrystalline erbium/arsenide layer or ytterbium/arsenide layer (7) is epitaxially applied on this layer. Following as a covering layer is a highly doped gallium/arsenide layer (8).</p> |
