SIDEWALL CHARGE-COUPLED IMAGE SENSING ELEMENT AND MANUFACTURE THEREOF

摘要

PURPOSE: To provide a charge coupled imaging device including a plurality of trenches in the surface of a silicon substrate for isolating adjacent rows in a CCD element. CONSTITUTION: A plurality of surface electrodes are arranged on the surface of a charge coupled device extending in the direction perpendicular to an isolation trench 10 and the electrode transfers clock control charges between adjacent cells in each row of the charge coupled device. A CCD cell is formed on a silicon ridge 12 which is formed between the isolation trenches 10. This structure maximizes the three-dimensional area of the CCD cell while facilitating transfer of charge along the side wall thereof. Layout of the side wall CCD cell having trench isolation is similar to that of conventional two-dimensional CCD cell but the charge capacity per CCD cell is increased because the three-dimensional area of the CCD cell is large. Increase of charge capacity means a significantly higher SN ratio and thereby a significantly wider dynamic range.