| 摘要 |
<p>PURPOSE:To provide the thin-film laminated device which prevents the peeling of an upper layer film by an intermediate layer consisting of a-Si. CONSTITUTION:A channel layer 4a and contact layer 4b as the intermediate layer consisting of the a-Si are formed on the gate insulating film 3 (lower layer film) of a thin-film transistor. A metallic film (upper layer film) to constitute a source electrode 5a and a drain electrode 5b is deposited on the channel layer 4a and the contact layer 4b. This metallic film is formed under such conditions under which the difference between the internal stress of the metallic film and the internal stress of the gate insulating film 3 decreases.</p> |
