Semiconductor memory device having thin film transistor and method of producing the same.

摘要

A semiconductor memory device includes a semiconductor substrate (1, 51), a memory cell provided on the semiconductor substrate and including first and second transfer transistors (Q3, Q4), first and second driver transistors (Q1, Q2), first and second thin film transistor loads (Q5, Q6), and first and second memory capacitors, where each of the first and second transfer transistors and the first and second driver transistors have a source, a drain and a gate electrode, each of the first and second thin film transistor loads have a source electrode, a drain electrode and one or two gate electrodes, and a connection region (23A, 31A, 81A, 90A, 95A) in which the drain (18) of the second thin film transistor load (Q6), the gate electrode of the first thin film transistor load (Q5) and the gate electrode (4, 55, 56) of the first driver transistor (Q1)are connected. The first memory capacitor has a storage electrode (24, 30, 33, 80, 82, 89, 91, 93, 96), a dielectric layer (27, 34, 83) which covers the storage electrode, and an opposing electrode (28, 35, 84) which is formed on the dielectric layer. The storage electrode of the first memory capacitor is made up of one or a plurality of fins (30, 32, 80, 82, 89, 91, 93).