| 摘要 |
PURPOSE:To obtain a resist pattern with superior dry etching resistance, resolution, etc. by using tetrahydrofuran or a soln. contg. tetrahydrofuran as a developer for a resist made of random copolymer of a monomer having no aromatic ring and styrene. CONSTITUTION:A random copolymer of >=90mol% styrene and <=10mol% butadiene, isoprene, (meth)acrylic acid ester or other monomer having no aromatic ring is used as a resist and irradiated with electron beams or far ultraviolet rays. The unirradiated part is then removed by dissolution in tetrahydrofuran or a solvent mixture of tetrahydrofuran and ethanol or the like as a developer. This developer does not cause the resist to peel off owing to swelling and gives a resist pattern with dry etching resistance, so it is suitable for use in the manufacture of a submicron pattern with high resolution mainly for manufacturing an integrated circuit. |
