MANUFACTURE OF AMORPHOUS SILICON THIN FILM TRANSISTOR SUBSTRATE OF ACTIVE MATRIX LIQUID CRYSTAL DISPLAY

摘要

PURPOSE:To uniformly and easily control dry etching of an n-type amorphous silicon ohmic layer by forming an amorphous silicon island, and then removing an unnecessary n<-> type amorphous silicon ohmic layer of a channel. CONSTITUTION:After a source electrode 37 and a drain electrode 38 are formed, an amorphous silicon island is formed by a photolithography and a reactive ion etching method with (CF4+O2) gases as main ingredients. Thereafter, resist is peeled and cleaned by peeling liquid, an asher, etc., to clean the surface of a thin film transistor substrate. An unnecessary n<-> type amorphous silicon ohmic layer 36 of a channel is removed by the reactive ion etching(RIE) method with the (CF4+O2) gases as main ingredients. Thus, an alpha-SiTFT array substrate having uniform and satisfactory large area semiconductor characteristics can be manufactured.