CHROMIUM-SILICON OXIDE TARGET MATERIAL

摘要

PURPOSE:To provide a Cr-SiO2 target material by forming a thin metal film capable of improving the bonding strength of a Cr-SiO2 sintered body having a high SiO2 content to a backing plate on the sintered body. CONSTITUTION:A sintered body 1 consisting of >=20wt.% SiO2 and the balance Cr is prepd. and a thin film of Ti, Cr or Ta is formed on a part or the whole of the surface of the sintered body 1 to be joined to a backing plate 6 to obtain a Cr-SiO2 target material. The pref. thickness of the thin film is 0.05-2.0mum. An Ni film is preferably formed on the thin film.