| 摘要 |
<p>PURPOSE:To prevent deterioration of characteristics of a photovoltaic diode array due to a high electric field by covering an element surface of a photovoltaic diode and a control circuit with a polycrystalline semiconductor layer for shielding. CONSTITUTION:A single-crystal silicon island 3 which is insulated and separated being surrounded by an oxide film 2 is formed on a polycrystalline silicon supporting substrate 1. Also, a photovoltaic diode 4 and a diode 5 are formed and a control circuit is integrated. In the photovoltaic diode 4, a P-type diffusion layer 12 and a N<+>-diffusion layer 11 and formed on the N-type single-crystal silicon island 3, an oxide film 13 is placed on it, and further a polycrystalline silicon layer 14 where phosphor is diffused is formed on it as a light- transmission conductive layer. Namely, a surface of an element of the photovoltaic diode 4 and a control circuit is covered with the polycrystalline silicon layer 14 for shielding, thus preventing deterioration of characteristics of the photovoltaic diode array and control circuit due to high electric field.</p> |
