发明名称 |
Method for producing a field-effect type semiconductor device |
摘要 |
A method for producing field-effect type semiconductor devices is disclosed which includes the steps of: forming a gate insulator film on a semiconductor substrate; forming a conductor film on the gate insulator film; and implanting impurity ions in the semiconductor substrate through the gate insulator film and the conductor film for the purpose of controlling a threshold voltage of the device, wherein the conductor film is employed as a gate electrode of the device. The method of this invention has the excellent advantages of readily controlling a threshold voltage of field-effect type semiconductor devices and of preventing the scatter of the threshold voltage values. An alternative embodiment employs formation of a second conductor film and implantation from an inclined direction.
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申请公布号 |
US5158903(A) |
申请公布日期 |
1992.10.27 |
申请号 |
US19900606493 |
申请日期 |
1990.10.31 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HORI, ATSUSHI;KAMEYAMA, SHUICHI;SHIMOMURA, HIROSHI;SEGAWA, MIZUKI |
分类号 |
H01L29/78;H01L21/265;H01L21/266;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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