| 摘要 |
A process for preparing a semiconductor device, which includes; forming on a semiconductive silicon substrate a gate oxide film and a gate electrode constituting a MOS transistor, a semiconductor element protective film on the gate electrode and a wiring layer on the protective film; forming, above the gate electrode, a first photoresist film having an opening correspondingly in position to a point that a channel region is to be provided, a silicon oxide film provided by spin-on-glass method and a second photoresist film having the same pattern as the first photoresist film in this order; etching by use of the second photoresist film as a mask to form a mask pattern which comprises three layers of the first and second photoresist films and the intervening silicon oxide film sandwiched therebetween and has an opening above the gate electrode correspondingly in position to that point for provision of the channel region; applying an impurity ion with high energy from above and through which mask pattern to be implanted under the gate electrode to form the channel region.
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