| 摘要 |
<p>PURPOSE:To reduce a number of manufacturing steps and to prevent deterioration of positioning precision and to enhance patterning precision. CONSTITUTION:The mask substrate for exposure is obtained by forming a light-shielding film 42 on an SiO2 substrate 41 to be used as a phase shifting layer, forming a first positive type resist 43, forming a second positive type resist 44 higher in sensitivity than the first resist 43, selectively exposing the resist 44 to low energy beams, further selectively exposing the resists 43, 44 to higher energy beams, then developing the resists 43, 44, etching the disclosed light-shielding film 42, further etching the substrate 41 disclosed by etching the film 42 by a prescribed depth, etching the resist 43 by using the resist 44 as a mask, and finally etching the film 42 disclosed by removing the resist 43.</p> |
