| 摘要 |
PURPOSE:To obtain a diamond Schottky diode small in reverse current and excellent in rectification property. CONSTITUTION:A P-type diamond semiconductor layer 2 doped with arsenic and an undoped diamond insulating layer 3 are successively laminated on an Si substrate 1 of low resistance, and an Al electrode 4 is provided onto the surface of the diamond insulating layer 3. An ohmic electrode 5 is provided onto the rear side of the Si substrate 1. When a positive voltage is applied to the Al electrode 4 to put a diamond Schottky diode of this design in a reversely biased state, the Schottky diode is enhanced in potential barrier and lessened in reverse current. |
