| 摘要 |
PURPOSE:To enhance etching resistance and also to prevent drop of pattern precision at the time of exposure by using a graft polymerization reaction. CONSTITUTION:The desired resist pattern is obtained on the substrate to be processed by forming an aluminum film 12 on the substrate 11, forming a first layer 13 made of a polymer capable of graft polymerization on the film 12, forming a second layer 14 made of a photosensitive resin on the layer 13, exposing the layer 14 to g line of a mercury lamp having the desired pattern, removing the exposed region of layer 14 to disclose the layer 13, graft-polymerizing the disclosed layer 13 with a monomer to form a graft polymer film 18 on the surface of the layer 13, removing the layer 14 left unexposed, and then, selectively removing the layer 13 by using the polymer film 18 as a mask. |
