首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
HEAT TREATMENT OF SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPH04302418(A)
申请公布日期
1992.10.26
申请号
JP19910091429
申请日期
1991.03.29
申请人
NEC CORP
发明人
TOMIYAMA TOMOHIKO
分类号
C30B33/02;H01L21/22;H01L21/31
主分类号
C30B33/02
代理机构
代理人
主权项
地址
您可能感兴趣的专利
EXTERNAL PREPARATIONS FOR TREATING DERMATITIS
LIGAND FOR THE C-KIT RECEPTOR AND METHODS OF USE THEREOF
MULTI-LIMBED REACTION VESSEL
Segment based image matching method and system
Human tracking apparatus and method, storage medium storing program executing the method, and mobile electronic system including the apparatus
Method for memory data storage by partition into narrower threshold voltage distribution regions
Conductive curable resin composition and separator for fuel cell
In-line actuator apparatus and method
Methods of controlling communication parameters of wireless systems
Disc with temporary defect management area, and disc defect management method and apparatus therefor
Inter-frequency neighbor list searching
Method and system for extracting data from surface array deposited features
Scalable, reconfigurable routers
Shared transmit buffer for network processor and methods for using same
Illuminated human-machine interface device
Procedure for detection of stress by segmentation and analyzing a heart beat signal
Providing security based on a device identifier prior to booting an operating system
Method of playing optical recording media
Ceramic igniters
Smart card providing data mapping for multiple applications and related methods
