| 摘要 |
PURPOSE:To provide statable read and operations of memory by forming stacked capacitors including upper electrodes, the top of which includes recesses having substantially vertical side walls to increase the storage of charge. CONSTITUTION:A lower electrode 8 is formed of a doped polycrystalline silicon film and connected to a diffused layer 6 through a contact hole C1 that penetrates an inner insulating film 7 and a gate insulator film 3. The lower electrode 8 has a top including recesses 8a having substantially vertical side walls. The recesses 8a serve to increase the effective surface area of the lower electrode 8, thus increasing the charge stored in a stacked capacitor. |
