| 摘要 |
<p>A method for forming a semiconductor device (10) includes the steps of forming an element site (24) on a surface (14) of a semiconductor substrate (12). A dopant is introduced into the semiconductor substrate (12) at the element site (24) to form a region (C). An oxide layer (70) is formed over the element site (24). A layer of polysilicon (74) is formed over a portion of element site (24). An oxide layer (98) is formed over the polysilicon layer (74) and the doped portion (C) of the substrate (12) exposed at element site (24). </p> |
