| 摘要 |
PURPOSE:To realize a high-speed MOSRAM, by controlling the write control transistor via a controll circuit and then separating the extra capacity of the writing bus line from the digit line during the reading. CONSTITUTION:When the reading mode is secured with the read/write signal R/W turning to a high level, the output is inverted to a low level for the control circuit 37 consisting of the NOR gate or the like in which the output of the sense circuit S1 is applied to one input terminal. Then the write control transistor 35 and 36 are turned on. As a result, the extra capacity of the writing bus line is separated from the digit line D1 or the like. Thus a high-speed MOSRAM is obtained without any reduction of the reading speed of the MOSRAM cell M1 and without impairing the merits of high density and large capacity. |
