| 摘要 |
PURPOSE:To increase light emission luminance by making a current in a specified range flow in the forward direction across an N-type layer and an I-type layer, before a large current necessary for light emission is made to flow after a light emitting diode is manufactured. CONSTITUTION:A light emitting diode has a sapphire substrate 1, on which a buffer layer 2 of AlN is formed. On the buffer layer 2, a high carrier concentration N<+> type layer 3 composed of GaN and a low carrier concentration N-type layer 4 composed of GaN are formed in order, and an I-type layer 5 composed of GaN is formed on the low carrier concentration N-type layer 4. A current in the range of 0.1-5mA is made to flow in the forward direction across the N-type layer 4 and the I-type layer 5, before a current necessary for light emission is made to flow after the diode is manufactured. The I-type layer 5 is kept at a high voltage with respect to the N-type layer 4, and the current flowing process is performed. After that, a driving current is made to flow in the light emitting diode 10 to emit light. Thereby light emission luminance is increased. |
