| 摘要 |
<p>PURPOSE:To manufacture the title voltage department nonlinear resistor having the non linearity by implanting oxygen ions in a zinc oxide sintered body. CONSTITUTION:A zinc oxide sintered body is fixed to the irradiation position in a vacuum vessel of an ion implanting device. Later, the vacuum vessel is evacuated to lead O<+>ions in a zinc oxide sintered body for implanting O<+>ions. At this time, the oxygen concentration in a specimen is to be increased. Resultantly, the adsorbed oxygen level is raised to make the potential barrier higher for enhancing the voltage non-linearity. The zinc oxide sintered body is heated at the temperature of 400-800 deg.C during the oxygen ion implantation step. Through these procedures, the diffusion rate of the oxygen ions implanted in the sintered body can be accelerated to expand the region where the adsorbed oxygen level is raised thereby enabling the voltage nonlinearity to be further enhanced.</p> |
