| 摘要 |
<p>PURPOSE:To obtain the plastic substrate which can form the thin-film laminated device having good characteristics and less deterioration by forming a thin film of a silicon nitrooxide on at least one surface of the substrate. CONSTITUTION:To thin film consisting of the silicon nitrooxide is formed on at least one surface. The device is constituted of the plastic substrate formed with the thin film on at least the thin-film laminated device side and the thin- film laminated device formed thereon in such a manner. The compsn. of the silicon nitrooxide (SiOxNy) is preferebly in 1.2<=x+y<=1.7, 0.1<=x<=0.8 and 1.3>=y>=0.7 ranges, more preferably in 1.3<=x+y<=1.5, 0.15<=x<=0.45 and 1.25>=y>=0.95 ranges. Then, the substrate for the resulted thin-film laminated device has excellent adhesion to plastics, does not generate peeling, cracking, etc., and is low in moisture prermeability and, therefore, the reliability of the thin-film laminated device formed thereon is improved.</p> |
