发明名称 PREPARING METHOD OF X-RAY MASK
摘要 <p>PURPOSE:To provide the X-ray mask having in-plane positional accuracy of a mask pattern. CONSTITUTION:Marker patterns 4 formed at every field x1-x4 are detected prior to the drawing of an X-ray mask, and drawing is conducted at every field x1-x4 while successively correcting positions. Continuity among the fields x1-x4 of mask patterns 3a crossing the fields x1-x4 is improved, the X-ray mask, in which these mask patterns 3a are formed accurately at positions according to a design, and the transfer accuracy of said X-ray mask is enhanced remarkably when said X-ray mask is used for X-ray lithography.</p>
申请公布号 JPH04297016(A) 申请公布日期 1992.10.21
申请号 JP19910084424 申请日期 1991.03.26
申请人 SOLTEC:KK 发明人 TANAKA TOSHIHIKO;OKADA KOICHI;SUGIHARA TAKASHI
分类号 G03F1/22;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F1/22
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