Method of depositing conductors in high aspect ratio apertures.
摘要
<p>A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods. <IMAGE></p>
申请公布号
EP0509305(A1)
申请公布日期
1992.10.21
申请号
EP19920105501
申请日期
1992.03.31
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
LEE, PEI-ING P.;LICATA, THOMAS J.;MCDEVITT, THOMAS L.;PARRIES, PAUL C.;PENNINGTON, SCOTT L.;RYAN, JAMES G.;STRIPPE, DAVID C.