| 摘要 |
PURPOSE:To contrive to make minute and high density by a method wherein a metal is formed on an insulating film containing a connecting hole through a close-adhered layer and a metal plug is formed by removing the metal and close-adhered layer so that the metal plug may be left wider than the connecting hole. CONSTITUTION:A resist mask 20 wider than a connecting hole 14 is formed on a branket tungsten layer 16 and the branket tungsten layer 16 and a close- adhered layer 15 are etch-removed to form a metal plug 16A. Next, a metal 21 forming an upper layer wiring is adhered and formed onto the entire surface. For instance, an Al-Si film as the metal 21 is adhered and formed by a sputtering. Thereafter, the surface is made flat by a resist film and then the entire surface is etched back to form an upper layer wiring 21A comprising, for instance, the Al-Si film so that the entire surface may coincide with an upper surface of the metal plug 16A. |
