Process for producing single crystal silicon surface layers,申请号US19600026384-传众专利搜索

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发明名称	Process for producing single crystal silicon surface layers
摘要
申请公布号	US3098774(A)	申请公布日期	1963.07.23
申请号	US19600026384	申请日期	1960.05.02
申请人	ALBERT MARK	发明人	MARK ALBERT
分类号	C30B25/02	主分类号	C30B25/02
代理机构		代理人
主权项
地址

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