| 摘要 |
PURPOSE:To obtain a gold wire bonding having a strong adhesion by using a multilayer film having an aluminum film or aluminum-silicon alloy film on its top as a bonding electrode to be connected to an electrode wiring. CONSTITUTION:On one principal plane of a semiconductor chip 11, for example, a field oxide film 12 of 1.0m thickness and a semiconductor element region 13 are formed and then, for example, a multilayer film of 0.9 m thickness which serves as an internal electrode wiring 16 and a multilayer film which serves as an external electrode wiring 17 are formed including a bonding electrode. At that time, each multilayer film is constituted of a tungsten silicide film 24 to be used as a barrier metal layer of 0.1m thickness, an aluminum-silicon- copper alloy film 25 which is added with copper for coping with various migrations, and an aluminum-silicon alloy film 26 of 0.4m thickness. By this method, a strong adhesion can be obtained and gold wire exfoliation troubles can be reduced at the time of resin sealing. |
