| 摘要 |
<p>PURPOSE:To provide the driving method, of a memory cell, which prevents an electric charge stored between a memory gate and a source or a drain at a nonselection operation from charging up. CONSTITUTION:At the driving method of a memory cell in which memory cells composed of transistors MTR for memory cell use and of transistors STR for selection use have been arranged in a matrix shape, a write voltage or an erasure voltage as a voltage between a memory gate and a source or a drain for the transistor for memory use connected to a selected line is applied, a part between a memory gate and a data line is then set to a reverse-phase potential with reference to the memory cell which has been connected to then memory cell for memory use by using the same data line, and an electric charge stored between the memory gate and the source or the drain at a nonselection operation is discharged.</p> |
