| 摘要 |
A sense amplifier circuit is provided in association with a column of memory cells through first and second bit lines for increasing a small difference in voltage level between the first and second bit lines and comprises first and second series combinations of field effect transistors coupled in parallel between a power voltage level and a discharging transistor, in which an auxiliary current path is established in parallel to a main current path produced in the second series combination while the small difference is increased, thereby accelerating the increasing operation of the small difference without any sacrifice of current consumption in the idling stage.
|
